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Plasma-activated bonding is a derivative, directed to lower processing temperatures for direct bonding with hydrophilic surfaces. The main requirements for lowering temperatures of direct bonding are the use of materials melting at low temperatures and with different coefficients of thermal expansion (CTE). Surface activation prior bonding has the typical advantage that no intermediate layer is needed and sufficiently high bonding energy is achieved after annealing at temperatures below 400 °C. == Overview == The decrease of temperature is based on the increase of bonding strength using plasma activation on clean wafer surfaces. Further, the increase is caused by elevation in amount of Si-OH groups, removal of contaminants on the wafer surface, the enhancement of viscous flow of the surface layer and the enhanced diffusivity of water and gas trapped at the interface.〔 Based on ambient pressure, two main surface activation fields using plasma treatment are established for wafer preprocessing to lower the temperatures during annealing. To establish maximum surface energy at low temperatures (< 100 °C) numerous parameters for plasma activation and annealing need to be optimized according to the bond material. Plasma activated bonding is based on process pressure divided into: * Atmospheric Pressure-Plasma Activated Bonding (AP-PAB) * * Dielectric barrier discharge * * Corona discharge * * Plasma torch (Jet) * Low Pressure-Plasma Activated Bonding (LP-PAB) * * RIE (Reactive Ion Etching) * * ICP RIE (Inductively Coupled Plasma Reactive Ion Etching) * * Sequential Plasma (SPAB) * * Remote Plasma 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Plasma-activated bonding」の詳細全文を読む スポンサード リンク
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